Coated article having low-E coating with ion beam treated IR reflecting layer and corresponding method

ABSTRACT

A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. An ion beam is used during at least part of forming an infrared (IR) reflecting layer(s) of such a coated article. Advantageously, this has been found to improve sheet resistance (R s ) properties, solar control properties, and/or durability of the coated article. Other layers may also be ion beam treated in certain example embodiments.

This application is a continuation of application Ser. No. 11/642,619,filed Dec. 21, 2006 now U.S. Pat. No. 7,641,978, which is a Divisionalof application Ser. No. 10/875,515, filed Jun. 25, 2004, (now U.S. Pat.No. 7,229,533), the entire contents of which are hereby incorporatedherein by reference in this application.

This invention relates to a coated article including a solar controlcoating such as a low-emissivity (low-E) coating. In certain exampleembodiments, the low-E coating includes an infrared (IR) reflectinglayer(s) of a material such as silver (Ag) or the like which is ion beamtreated. In certain example embodiments, the ion beam treatment isperformed in a manner so as to cause the IR reflecting layer to realizecompressive stress (as opposed to normal tensile stress) and/or toreduce electrical resistance (sheet resistance R_(s) and/or bulkresistance) of the coated article. Coated articles according to certainexample embodiments of this invention may be used in the context ofvehicle windshields, insulating glass (IG) window units, other types ofwindows, or in any other suitable application.

BACKGROUND OF THE INVENTION

Coated articles are known in the art for use in window applications suchas insulating glass (IG) window units, vehicle windows, and/or the like.Example non-limiting low-emissivity (low-E) coatings are illustratedand/or described in U.S. Pat. Nos. 6,723,211; 6,576,349; 6,447,891;6,461,731; 3,682,528; 5,514,476; 5,425,861; and 2003/0150711, thedisclosures of which are all hereby incorporated herein by reference.

In certain situations, designers of coated articles with low-E coatingsoften strive for a combination of high visible transmission,substantially neutral color, low emissivity (or emittance), low sheetresistance (R_(s)), and good durability. High visible transmission forexample may permit coated articles to be more desirable in applicationssuch as vehicle windshields or the like, whereas low-emissivity (low-E)and low sheet resistance (R_(s)) characteristics permit such coatedarticles to block significant amounts of IR radiation so as to reducefor example undesirable heating of vehicle or building interiors. It isoften difficult to obtain high visible transmission and adequate solarcontrol properties such as good IR blockage, combined with gooddurability (chemical and/or mechanical durability) because materialsused to improve durability often cause undesirable drops in visibletransmission and/or undesirable color shifts of the product upon heattreatment.

Low-E coatings typically include one or more IR reflecting layers. An IRreflecting layer is typically metallic or mostly metallic, and is oftenof a material such as silver (Ag), gold (Au), or the like. The silver orgold may be doped with other materials in certain instances. The purposeof the IR reflecting layer(s) is to block significant amounts of IRradiation, thereby preventing the same from undesirably heating upvehicle and/or building interiors which the coated article isprotecting.

Generally speaking, the lower the electrical resistance (sheetresistance R_(s) and/or bulk resistance) of an IR reflecting layer, thebetter the IR reflecting characteristics thereof. However, it hasheretofore been difficult to reduce resistance properties (and thusimprove IR reflecting characteristics) of an IR reflecting layer withoutadversely affecting optical characteristics of a coated article (e.g.,visible transmission, color, etc.) and/or durability of a coatedarticle. For instances, significant changes in the thickness of an IRreflecting layer alone may affect resistance, but at the same time willadversely affect durability and/or optical characteristics of thecoating.

In view of the above, it will be apparent to those skilled in the artthat there exists a need in the art for a technique for reducingresistance characteristics of an IR reflecting layer(s) therebyimproving IR reflecting characteristics thereof and thus solar controlproperties of a coated article, without significantly adverselyaffecting durability and/or optical characteristics of the coatedarticle. There also exists a need in the art for a method of making sucha coated article.

BRIEF SUMMARY OF EXAMPLE EMBODIMENTS OF THE INVENTION

In certain example embodiments of this invention, an infrared (IR)reflecting layer(s) is ion beam treated using at least ions from aninert gas such as argon. It has surprisingly been found that if the iontreatment is performed in a suitable manner, this causes (a) theelectrical resistance of the IR reflecting layer to decrease compared toif the ion beam treatment was not performed, thereby improving IRreflecting characteristics thereof, and/or (b) durability of the coatedarticle to improve.

In certain example embodiments of this invention, it has unexpectedlybeen found that ion beam treatment of an IR reflecting layer of amaterial such as Ag, Au or the like, causes the stress of the layer tochange from tensile to compressive. In this regard, it has been foundthat the compressive nature of the stress of the IR reflecting layer(s)can function to improve durability (chemical and/or mechanical) of thecoated article.

Accordingly, suitable ion beam treating of an IR reflecting layer(s) hasbeen found in certain example embodiments of this invention to achieve acombination of: (i) improved resistance of the IR reflecting layer, (ii)improved solar control characteristics of the coated article such as IRblocking, and (iii) improved durability of the coated article.

In certain example embodiments of this invention, an IR reflecting layermay be formed in the following manner. First, a seed layer (e.g., of Agor the like) is formed by sputtering. Then, after sputtering of the seedlayer, ion beam assisted deposition (IBAD) is used to form an additionalor remainder portion of the IR reflecting layer. In the IBAD type of ionbeam treatment, both an ion beam source(s) and a sputtering target(s)are used. An ion beam from the ion beam source (e.g., including Ar+ions) intersects with the material sputtered from the sputteringtarget(s) proximate the surface where the additional or remainderportion of the IR reflecting layer is being grown, so that theadditional or remainder portion of the IR reflecting layer isgrown/formed by a simultaneous combination of both the ion beam andsputtering.

In other example embodiments of this invention, the IR reflecting layermay be formed entirely using IBAD. At the beginning of the IR reflectinglayer formation using IBAD, the volts applied to the ion source are lowor zero so that the ion beam either is not formed or is of a low powertype (i.e., low eV per ion). Then, during formation of the IR reflectinglayer after at least some of the layer has been deposited, the voltageat the ion source is increased so as to increase the eV per ion in theion beam. In other words, the ion energy is increased, eitherprogressively or in a step-like manner, during formation of the IRreflecting layer. This prevents or reduces damages to the lower portionof the layer and/or to the layer under the same.

In certain example embodiments of this invention, there is provided amethod of making a coated article, the method comprising: providing aglass substrate; forming at least one dielectric layer on the substrate;forming an infrared (IR) reflecting layer comprising silver on thesubstrate over at least the first dielectric layer, where said formingof the IR reflecting layer comprises (a) sputter-depositing a firstlayer portion, or seed layer, comprising silver; and (b) using asimultaneous combination of an ion beam and material moving toward thesubstrate from a sputtering target to form a second layer portionimmediately over and contacting the first layer portion; and forming atleast one additional dielectric layer on the substrate over at least theIR reflecting layer.

In other example embodiments of this invention, there is provided amethod of making a coated article, including forming an infrared (IR)reflecting layer on a glass substrate, where said forming of the IRreflecting layer comprises: sputter-depositing a first layer portion, orseed layer; of the IR reflecting layer and using a simultaneouscombination of an ion beam and material moving toward the substrate froma sputtering target to form a second layer portion immediately over andcontacting the first layer portion; and forming at least one additionallayer on the substrate over at least the IR reflecting layer.

In still further example embodiment of this invention, there is provideda coated article including a glass substrates supporting a coating,wherein the coating comprises: at least one dielectric layer; an IRreflecting layer provided on the substrate over at least the dielectriclayer; another dielectric layer provided on the substrate over at leastthe IR reflecting layer and the at least one dielectric layer; andwherein the IR reflecting layer comprises silver and has compressivestress.

In other example embodiments of this invention, there is provided acoated article including a glass substrates supporting a coating,wherein the coating comprises: at least one dielectric layer; an IRreflecting layer provided on the substrate over at least the dielectriclayer; another dielectric layer provided on the substrate over at leastthe IR reflecting layer and the at least one dielectric layer; andwherein the IR reflecting layer has different portions which differ withrespect to content of an inert element, so that an upper portion of theIR reflecting layer has a higher concentration of the inert element thandoes a lower portion of the IR reflecting layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart illustrating certain steps carried out in making acoated article according to an example embodiment of this invention.

FIGS. 2( a) to 2(c) are cross sectional views illustrating variousstages in manufacturing a coated article according to an exampleembodiment of this invention.

FIG. 3 is a cross sectional view of a coated article according to anexample embodiment of this invention.

FIG. 4 is a cross sectional view of an example ion source that may beused to ion beam treat layers according to example embodiments of thisinvention.

FIG. 5 is a perspective view of the ion source of FIG. 4.

FIG. 6 is a diagram illustrating ion beam assisted deposition (IBAD) ofa layer according to an example embodiment of this invention; this maybe used to ion beam treat any layer mentioned herein that can be ionbeam treated.

FIG. 7 is a flowchart illustrating certain steps carried out in making acoated article according to another example embodiment of thisinvention.

DETAILED DESCRIPTION OF EXAMPLES OF THE INVENTION

Referring now to the accompanying drawings in which like referencenumerals indicate like parts throughout the several views.

Coated articles herein may be used in applications such as vehiclewindshields, monolithic windows, IG window units, and/or any othersuitable application that includes single or multiple glass substrateswith at least one solar control coating thereon. In vehicle windshieldapplications, for example, a pair of glass substrates may be laminatedtogether with a polymer based layer of a material such as PVB, and thesolar control coating (e.g., low emissivity or low-E coating) isprovided on the interior surface of one of the glass substrates adjacentthe polymer based layer. In certain example embodiments of thisinvention, the solar control coating (e.g., low-E coating) includes adouble-silver stack, although this invention is not so limited in allinstances (e.g., single silver stacks and other layer stacks may also beused in accordance with certain embodiments of this invention).

In certain example embodiments of this invention, an infrared (IR)reflecting layer(s) (e.g., see Ag inclusive layer 9 and/or 19 discussedbelow) is ion beam treated using at least ions from an inert gas such asargon. It has surprisingly been found that if the ion treatment isperformed in a suitable manner, this causes (a) the electricalresistance of the IR reflecting layer(s) to decrease compared to if theion beam treatment was not performed, thereby improving IR reflectingcharacteristics thereof, and/or (b) durability of the coated article toimprove.

Moreover, in certain example embodiments of this invention, it hasunexpectedly been found that ion beam treatment of an IR reflectinglayer (e.g., 9 and/or 19) of a material such as Ag, Au or the likecauses the stress of the layer to change from tensile to compressive. IRreflecting layers deposited by only sputtering typically have tensilestress. However, the use of ion beam treatment in a suitable manner hassurprisingly been found to cause the stress of an IR reflecting layer(s)to be compressive. In this regard, it has been found that thecompressive nature of the stress of the IR reflecting layer(s) canfunction to improve durability (chemical and/or mechanical) of thecoated article. Moreover, it has also been found that such ion beamtreatment also reduces electrical resistance of the coated article(i.e., of the IR reflecting layer(s) in particular) thereby improvingsolar control properties thereof.

Accordingly, suitable ion beam treating of an IR reflecting layer(s) hasbeen found in certain example embodiments of this invention to achieve aremarkable combination of: (i) improved resistance of the IR reflectinglayer, (ii) improved solar control characteristics of the coated articlesuch as JR blocking, and (iii) improved durability of the coatedarticle. With respect to durability, an example is that the coating isless likely to quickly corrode when exposed to environmental conditionssuch as high temperatures, high humidity, and so forth.

Referring to FIGS. 1-3, in certain example embodiments of thisinvention, an IR reflecting layer (9 and/or 19) may be formed in thefollowing manner. At least one underlying layer is formed on glasssubstrate 1 via sputtering or the like as shown in FIG. 2( a) (see stepS1 in FIG. 1). In FIG. 3, the underlying layers would be layers 3 and 7.Then, a seed layer (e.g., of Ag or the like) is formed on the substrateover the underlying layer(s) by sputtering at least one target of Ag orthe like as shown in FIG. 2( b) (see S2 in FIG. 1). The seed layer istypically metallic, or substantially metallic, and of a material such asAg, Au or the like. However, in certain embodiments, the seed layer mayconsist essentially of Ag and/or Au, and be doped with small amounts ofother materials such as oxygen or metal(s). Preferably, the seed layeris substantially of the same material (e.g., Ag) as the ultimate IRreflecting layer (9 and/or 19) being formed. Since the seed layer isformed sputtering, the seed layer will typically be formed in a mannerso as to have tensile stress. In certain example embodiments of thisinvention, the Ag seed layer is sputtered onto the substrate so as tohave a thickness of from about 10 to 100 Å, more preferably from about30 to 80 Å, even more preferably from about 40 to 70 Å, with an examplethickness being about 60 Å.

Then, after sputtering of the seed layer on the substrate as shown inFIG. 2( b), ion beam assisted deposition (IBAD) is used to form anadditional or remainder portion of the IR reflecting layer (9 and/or 19)as shown in FIG. 2( c) (see S3 in FIG. 1). FIGS. 2( c) and 6 illustratethat in the IBAD type of ion beam treatment/formation, both an ion beamsource(s) 26 and a sputtering device including a sputtering target(s) 50are used. An ion beam B from the ion beam source 26 intersects with thematerial M sputtered from the sputtering target(s) 50 proximate thesurface where the additional or remainder portion of the IR reflectinglayer is being grown, so that the additional or remainder portion of theIR reflecting layer is grown/formed by a simultaneous combination ofboth the ion beam and sputtering. In certain example embodiments of thisinvention, a first Ag sputtering target is used for sputter-depositingthe seed layer, and a second Ag sputtering target spaced apart from thefirst target is used to deposit/form the additional or remainder portionof the IR reflecting layer via IBAD.

The use of the seed layer and then the subsequent formation of theadditional or remaining portion of the IR reflecting layer (9 and/or 19)using IBAD as shown in FIGS. 1-2 and 6 results in an IR reflecting layerthat is graded with respect to argon content. In particular, an upperportion of the IR reflecting layer includes a higher Ar concentrationthan does a lower portion of the IR reflecting layer. This is because Arions do not impinge upon the layer during formation thereof until afterthe seed layer has been formed. Accordingly, the upper portion of theresulting IR reflecting layer includes a higher Ar content than does thelower portion of the layer. This grading would be for content of anotherelement (e.g., Kr and/or Xe) if the other element(s) was used instead ofor in place of Ar in the ion beam in alternative embodiments of thisinvention. In certain example embodiments, the upper portion of the IRreflecting layer (9 and/or 19) has an argon (or other inert element)concentration at least 10% higher than that of the lower portion of theIR reflecting layer, more preferably at least 20% higher, and mostpreferably at least 30% higher. The “lower portion” is merely somearbitrarily selected portion of the layer at least partially below thecenter point of the layer, where the “upper portion” of the layer issome arbitrarily selected portion of the layer at least partially abovethe center of the layer. In certain example instances, the upper portionmay be the upper 20 Å of the IR reflecting layer, and the lower portionmay be the lower 60 Å (or 20 Å) of the layer.

Thus, the resulting IR reflecting layer (9 and/or 19) shown in FIGS. 2(c) and 3 is made up of the combination of the Ag inclusive seed layerand the Ag inclusive layer formed immediately thereover via IBAD. Notethat the seed layer will have been modified by the IBAD process, with Arions having been injected thereinto and/or its stress having beenchanged from tensile to compressive. As explained above, it hassurprisingly been found that: (a) the MAD formation of the Ag layerportion of the seed layer in a suitable manner causes the stress of theseed layer to change from tensile to compressive in the final IRreflecting layer 9 and/or 19; and (b) the IBAD formation of theadditional Ag inclusive layer portion immediately over and contactingthe seed layer results in an IR reflecting layer having improvedelectrical resistance properties and thus improved solar controlfunctionality.

Then, following formation of the IR reflecting layer 9 and/or 19,additional layer(s) are deposited on the substrate 1 over at least theIR reflecting layer (see step S4 in FIG. 1). These additional layer inthe example FIG. 3 embodiment may be layers 11-25 and/or 21-25.

In certain example embodiments, the resulting IR reflecting layer 9and/or 19 has a thickness of from about 60 to 200 Å, more preferablyfrom about 80 to 170 Å, even more preferably from about 100 to 140 Å,with an example being about 120 Å. Moreover, in certain exampleembodiments of this invention, the IR reflecting layer(s) 9 and/or 19are substantially free of oxygen. For example, the IR reflectinglayer(s) 9 and/or 19 include from about 0-10% oxygen, more preferablyfrom about 0-5% oxygen, even more preferably from about 0-2% oxygen andmost preferably from 0-1% oxygen. This substantially free of oxygencharacteristic may be achieved throughout the entire thickness of thelayer, or alternative in at least a central portion of the layer nolocated immediately adjacent the contact layers.

In certain example embodiments of this invention, the ion beam includesat least ions from an inert gas used in the ion source 26. For example,the ion beam B may be of or include Ar+ ions if only Ar gas is used inthe ion source 26. In certain example embodiments of this invention, theion beam is substantially free of oxygen ions and the gas used in theion source 26 is substantially free of oxygen. Thus, the ion beam B andgas introduced into the ion source 26 include from 0-10% oxygen, morepreferably from 0-5% oxygen, even more preferably from 0-2% oxygen, andmost preferably from 0-1% oxygen (0% oxygen may be preferred in manyinstances). The ion beam is also substantially free of nitrogen ions incertain example embodiments of this invention.

Moreover, in certain example embodiments of this invention, in formingthe additional or remainder portion of the IR reflecting layer(s) 9and/or 19 via IBAD, an ion energy of from about 150 to 700 eV per Ar⁺ion, more preferably of from about 200 to 600 eV per Ar⁺ ion, and mostpreferably about 500 eV per Ar⁺ ion is used. As an example, when only Argas is used in the ion source 26, an anode/cathode voltage of from about300 to 1,400 V may be used at the source 26, more preferably from about400 to 1,200 V, and most preferably about 1,000 V.

FIG. 3 is a side cross sectional view of a coated article according toan example non-limiting embodiment of this invention. The coated articleincludes substrate 1 (e.g., clear, green, bronze, or blue-green glasssubstrate from about 1.0 to 10.0 mm thick, more preferably from about1.0 mm to 3.5 mm thick), and a low-E coating (or layer system) 2provided on the substrate 1 either directly or indirectly. The coating(or layer system) 2 includes, in this example embodiment: dielectricsilicon nitride layer 3 (which may be ion beam treated) which may be ofSi₃N₄ or of any other suitable stoichiometry of silicon nitride indifferent embodiments of this invention, first lower contact layer 7(which contacts IR reflecting layer 9), first conductive and preferablymetallic or substantially metallic infrared (IR) reflecting layer 9,first upper contact layer 11 (which contacts layer 9), dielectric layer13 (which may be deposited in one or multiple steps in differentembodiments of this invention), another silicon nitride layer 14, secondlower contact layer 17 (which contacts IR reflecting layer 19), secondconductive and preferably metallic IR reflecting layer 19, second uppercontact layer 21 (which contacts layer 19), dielectric layer 23, andfinally dielectric silicon nitride overcoat layer 25 (which may be ionbeam treated). The “contact” layers 7, 11, 17 and 21 each contact atleast one IR reflecting layer. The aforesaid layers 3-25 make up low-E(i.e., low emissivity) coating 2 which is provided on glass or plasticsubstrate 1. Silicon nitride layer 25 is the outermost layer of thecoating 2.

In embodiments herein discussing ion beam treatment of IR reflectinglayer, the ion beam treatment/formation may be performed with respect toAg layers 9 and/or 19.

In monolithic instances, the coated article includes only one glasssubstrate 1 as illustrated in FIG. 3. However, monolithic coatedarticles herein may be used in devices such as laminated vehiclewindshields, IG window units, and the like. A laminated vehicle windowsuch as a windshield includes first and second glass substrateslaminated to one another via a polymer based interlayer (e.g., see U.S.Pat. No. 6,686,050, the disclosure of which is incorporated herein byreference). One of these substrates of the laminate may support coating2 on an interior surface thereof in certain example embodiments. As forIG window units, an IG window unit may include two spaced apartsubstrates 1. An example IG window unit is illustrated and described,for example, in U.S. Pat. No. 6,632,491, the disclosure of which ishereby incorporated herein by reference. An example IG window unit mayinclude, for example, the coated glass substrate 1 shown in FIG. 3coupled to another glass substrate via spacer(s), sealant(s) or the likewith a gap being defined therebetween. This gap between the substratesin IG unit embodiments may in certain instances be filled with a gassuch as argon (Ar). An example IG unit may comprise a pair of spacedapart clear glass substrates each about 4 mm thick one of which iscoated with a coating herein in certain example instances, where the gapbetween the substrates may be from about 5 to 30 mm, more preferablyfrom about 10 to 20 mm, and most preferably about 16 mm. In certainexample instances, the coating 2 may be provided on the interior surfaceof either substrate facing the gap.

Example details relating to layers 3, 7, 9, 11, 13, 14, 17, 19, 21, 23and 25 of the FIG. 3 coating are discussed in U.S. patent applicationSer. No. 10/800,012, the disclosure of which is hereby incorporatedherein by reference. For example, dielectric layers 3 and 14 may be ofor include silicon nitride in certain embodiments of this invention.Silicon nitride layers 3 and 14 may, among other things, improveheat-treatability of the coated articles, e.g., such as thermaltempering or the like. The silicon nitride of layers 3 and/or 14 may beof the stoichiometric type (Si₃N₄) type, nitrogen doped type due to ionbeam treatment thereof as discussed herein, or alternatively of theSi-rich type in different embodiments of this invention. Any and/or allof the silicon nitride layers discussed herein may be doped with othermaterials such as stainless steel or aluminum in certain exampleembodiments of this invention. For example, any and/or all siliconnitride layers discussed herein may optionally include from about 0-15%aluminum, more preferably from about 1 to 10% aluminum, most preferablyfrom 1-4% aluminum, in certain example embodiments of this invention.The silicon nitride may be deposited by sputtering a target of Si orSiAl in certain embodiments of this invention. Moreover, silicon nitridelayer 3 may be ion beam treated in any manner discussed herein (e.g.,with at least nitrogen ions via IBAD) in order to reduce sodiummigration from the glass substrate toward the IR reflecting layer(s)during HT.

Infrared (IR) reflecting layers 9 and 19 are preferably substantially orentirely metallic and/or conductive, and may comprise or consistessentially of silver (Ag), gold, or any other suitable JR reflectingmaterial. One or both of IR reflecting layers 9 and/or 19 may be formedby the ion beam inclusive techniques as discussed herein with respect toFIGS. 1-2. IR reflecting layers 9 and 19 help allow the coating to havelow-E and/or good solar control characteristics. The IR reflectinglayers may, however, be slightly oxidized in certain embodiments of thisinvention.

Dielectric layer 13 may be of or include tin oxide in certain exampleembodiments of this invention. However, as with other layers herein,other materials may be used in different instances. Lower contact layers7 and/or 17 in certain embodiments of this invention are of or includezinc oxide (e.g., ZnO). The zinc oxide of layer(s) 7, 17 may containother materials as well such as Al (e.g., to form ZnAlO_(x)). Forexample, in certain example embodiments of this invention, one or moreof zinc oxide layers 7, 17 may be doped with from about 1 to 10% Al,more preferably from about 1 to 5% Al, and most preferably about 2 to 4%Al. The use of zinc oxide 7, 17 under the silver 9, 19 allows for anexcellent quality of silver to be achieved. Upper contact layers 11and/or 21 may be of or include NiCr, NiCrO_(x) and/or the like indifferent example embodiments of this invention.

Dielectric layer 23 may be of or include tin oxide in certain exampleembodiments of this invention. However, layer 23 is optional and neednot be provided in certain example embodiments of this invention.Silicon nitride overcoat layer 25 may be initially deposited bysputtering or IBAD, and may be ion beam treated in any manner discussedherein.

Other layer(s) below or above the illustrated coating may also beprovided. Thus, while the layer system or coating is “on” or “supportedby” substrate 1 (directly or indirectly), other layer(s) may be providedtherebetween. Thus, for example, the coating of FIG. 3 may be considered“on” and “supported by” the substrate 1 even if other layer(s) areprovided between layer 3 and substrate 1. Moreover, certain layers ofthe illustrated coating may be removed in certain embodiments, whileothers may be added between the various layers or the various layer(s)may be split with other layer(s) added between the split sections inother embodiments of this invention without departing from the overallspirit of certain embodiments of this invention.

FIG. 7 is a flowchart illustrating how an IR reflecting layer 9 and/or19 may be formed according to another example embodiment of thisinvention. In the FIG. 7 embodiment, an IR reflecting layer may beformed entirely using IBAD. At the beginning of the IR reflecting layerformation using IBAD, the volts applied to the ion source are low orzero so that the ion beam either is not formed or is of a low energytype (i.e., low eV per ion). Then, during formation of the IR reflectinglayer after at least some of the layer has been deposited, the voltageat the ion source is increased so as to increase the eV per ion in theion beam. In other words, the ion energy is increased, eitherprogressively or in a step-like manner, during formation of the IRreflecting layer. This prevents or reduces damage to the lower portionof the IR reflecting layer and/or to the layer under the same since alow energy ion beam is used to form the initial part of the IRreflecting layer, and yet achieves the advantages discussed herein withrespect to the final IR reflecting layer since a higher energy is usedto form at least the upper portion of the IR reflecting layer.

Referring in detail to FIG. 7, one or more underlying layer(s) aredeposited on substrate 1 (ST1). This step is similar to step S1 in theFIG. 1 embodiment. Then, during the deposition of the first portion ofthe IR reflecting layer (9 and/or 19), IBAD is used but the ion beam ischaracterized by a relatively low energy (ST2). For example, in ST2during the formation of the initial portion of the IR reflecting layer,an ion energy of from about 0 to 200 eV per Ar⁺ ion, more preferablyfrom about 1 to 150 eV, more preferably from about 5 to 100 eV per Ar⁺ion is used. Again, other inert gas(es) may be used instead of or inaddition to argon. Then, after part of the IR reflecting layer has beenformed, the ion energy is increased for forming the additional orremainder portion of the IR reflecting layer(s) 9 and/or 19 via IBAD(ST3). In certain example embodiments, the ion energy is increased to anion energy of from about 150 to 700 eV per Ar⁺ ion, more preferably offrom about 200 to 600 eV per Ar⁺ ion, and most preferably about 500 eVper Ar⁺ ion in ST3. In certain example embodiments of this invention,the ion energy is increased by at least about 10% in step ST3, morepreferably at least about 25%, even more preferably at least about 50%,sometimes at least about 100%. After the additional and/or remainderportion of the IR reflecting layer has been formed using the higher ionenergy, additional layer(s) are deposited/formed on the substrate 1 overat least the IR reflecting layer (ST4).

While various thicknesses and materials may be used in layers indifferent embodiments of this invention, example thicknesses andmaterials for the respective layers on the glass substrate 1 in the FIG.3 embodiment are as follows, from the glass substrate 1 outwardly. Oneor both of the IR reflecting layers 9 and/or 19 are formed/depositedusing at least MAD according to any of the embodiments discussed herein.

Example Materials/Thicknesses FIG. 3 Embodiment

Layer Preferred More Glass (1-10 mm thick) Range (Å) Preferred (Å)Example (Å) Si₃N₄ (layer 3) 40-450 Å 70-250 Å 100 ZnO_(x) (layer 7)10-300 {acute over (Å)} 40-150 {acute over (Å)} 100 Ag (layer 9) (IBAD)50-250 {acute over (Å)} 80-120 {acute over (Å)} 98 NiCrO_(x) (layer 11)10-100 {acute over (Å)}  30-45 {acute over (Å)} 35 SnO₂ (layer 13)0-1,000 Å  350-630 Å  570 Si_(x)N_(y) (layer 14) 50-450 {acute over (Å)}90-150 {acute over (Å)} 120 ZnO_(x) (layer 17) 10-300 {acute over (Å)}40-150 {acute over (Å)} 95 Ag (layer 19)(IBAD) 50-250 {acute over (Å)}80-220 {acute over (Å)} 96 NiCrO_(x) (layer 21) 10-100 {acute over (Å)} 30-45 {acute over (Å)} 35 SnO₂ (layer 23)  0-750 Å 150-300 Å  200 Si₃N₄(layer 25) 10-750 {acute over (Å)} 100-320 {acute over (Å )} 180

Optionally, one or both of silicon nitride inclusive layers 3 and/or 25may be ion beam treated in certain example embodiments of thisinvention. Ion beam treatment of silicon nitride inclusive layer 3 hassurprisingly been found to reduce sodium migration during optional heattreatment thereby improving coating characteristics, whereas ion beamtreatment of silicon nitride overcoat layer 25 has been found to improvedurability of the resulting coated article. The ion beam treatments oflayer(s) 3 and/or 25 may be performed with either via IBAD usingnitrogen ions from at least nitrogen gas in the ion source, and/or viaso-called peening where an ion source directs at least nitrogen ions atthe layer after sputtering thereof.

In different embodiments of this invention, the ion beam treatment of asilicon nitride inclusive layer 3 and/or 25 may be performed: (a) whilethe layer is being sputter-deposited, and/or (b) after the layer hasbeen sputter-deposited. The latter case (b) may be referred to aspeening, while the former case (a) may be referred to as ion beamassisted deposition (IBAD) in certain example instances. IBADembodiments (e.g., see FIG. 8) are particularly useful for unexpectedlycausing a deposited layer to realize anti-migration characteristicsregarding sodium migration relating to layer 3. However, post-sputteringion beam treatment (or peening) may also be used in any ion beamtreatment embodiment herein. In certain example embodiments of thisinvention, ion beam treatment is performed in a manner so as to causepart or all of a silicon nitride inclusive layer 3 and/or 25 to becomenitrogen-rich (N-rich). In such embodiments, dangling Si bonds arereduced or eliminated, and excess nitrogen is provided in the layer(e.g., see layer 3 and/or 25). This may in certain instances be referredto as a solid solution of N-doped silicon nitride. Thus, in certainexample instances, the layer(s) 3 and/or 25 may comprise Si₃N₄ which isadditionally doped with more nitrogen. In certain example embodiments,the Si₃N₄ may be doped with at least 0.1% (atomic %) nitrogen, morepreferably from about 0.5 to 20% nitrogen, even more preferably fromabout 1 to 10% nitrogen, and most preferably from about 2 to 10%nitrogen (or excess nitrogen). In certain example instances, thenitrogen doping may be at least about 2% nitrogen doping. Unlike thenitrogen in the Si₃N₄ of the layer, the excess nitrogen (or the dopingnitrogen referenced above) is not bonded to Si (but may or may not bebonded to other element(s)). This nitrogen doping of Si₃N₄ may bepresent in either the entire layer comprising silicon nitride, oralternatively in only a part of the layer comprising silicon nitride(e.g., proximate an upper surface thereof in peening embodiments).Surprisingly, it has been found that this excess nitrogen in the layer(i.e., due to the N-doping of Si₃N₄) is advantageous in that it resultsin less structural defects, reduced sodium migration during optionalheat treatment when used in a layer under an IR reflecting layer(s), andrenders the layer less reactive to oxygen thereby improving durabilitycharacteristics. In certain example embodiments of this invention, atleast nitrogen (N) ions are used to ion treat a layer(s) comprisingsilicon nitride. In certain example embodiments, using an ion beamtreatment post-sputtering (i.e., peening), such an ion beam treatmentmay include utilizing an energy of at least about 550 eV per N₂ ⁺ ion,more preferably from about 550 to 1,200 eV per N₂ ⁺ ion, even morepreferably from about 600 to 1100 eV per N₂ ⁺ ion, and most preferablyfrom about 650 to 900 eV per N₂ ⁺ ion (an example is 750 eV per N₂ ⁺ion). It has surprisingly been found that such ion energies permitexcellent nitrogen grading characteristics to be realized in a typicallysputter-deposited layer of suitable thickness, significantly reduce thenumber of dangling Si bonds at least proximate the surface of the layercomprising silicon nitride, provide improved stress characteristics tothe coating/layer, provide excellent doping characteristics, reduce thepotential for sodium migration, and/or cause part or all of the layer tobecome nitrogen-rich (N-rich) which is advantageous with respect todurability. Possibly, such post-sputtering ion beam treatment may evencause the stress of the layer to change from tensile to compressive incertain example instances. In IBAD embodiments where the ion beamtreatment is performed simultaneously with sputtering of the layer 3and/or 25, it has surprisingly been found that a lower ion energy of atleast about 100 eV per N₂ ⁺ ion, more preferably of from about 200 to1,000 eV per N₂ ⁺ ion, more preferably from about 200 to 600 eV per N₂ ⁺ion, still more preferably from about 300 to 500 eV per N₂ ⁺ ion(example of 400 eV per N₂ ⁺ ion) is most suitable at the surface beingtreated. It has surprisingly been found that such ion energies in IBADembodiments significantly reduce the number of dangling Si bonds,provide improved stress characteristics to the coating/layer, provideexcellent doping characteristics, reduce sodium migration during heattreatment, and/or cause part or all of the layer to become nitrogen-rich(N-rich) which is advantageous with respect to durability. It hassurprisingly been found that this ion energy range is especiallybeneficial in causing the silicon nitride layer 3 and/or 25 to realizecompressive stress and/or prevent or reduce sodium migration duringoptional heat treatment. If the ion energy is too low, then the layerwill not densify sufficiently. On the other hand, if the ion energy istoo high, this could cause damage to the layer and/or cause the stressof the treated layer to flip to tensile. Thus, this ion energy rangeprovides for unexpected and advantageous results. In certain exampleinstances, it has surprisingly been found that the ion treatment oflayer 3 and/or 25 may improve durability, heat treatability and/orcoloration characteristics of the coated article by at least one of: (i)creating nitrogen-doped Si₃N₄ in at least part of the layer, therebyreducing Si dangling bonds and susceptibility to sodium migration uponheat treatment; (ii) creating a nitrogen graded layer in which thenitrogen content is greater in an outer portion of the layer closer tothe layer's outer surface than in a portion of the layer further fromthe layer's outer surface; (iii) increasing the density of the layerwhich has been ion beam treated, (iv) using an ion energy suitable forcausing the stress characteristics of the layer to be improved; (v)improving stoichiometry control of the layer, (vi) causing the layer tobe less chemically reactive following ion treatment thereof, (vii)causing the layer to be less prone to significant amounts of oxidationfollowing the ion treatment, and/or (viii) reducing the amount and/orsize of voids in the layer which is ion treated. In certain exampleembodiments of this invention, the ion treatment is treatment using anion beam from at least one ion source, where Ar, or Ar and N ions arepreferred.

In certain IBAD embodiments, if the appropriate ion energy is used for agiven material, the compressive stress of the IBAD-deposited layer 3, 9,19, and/or 25 may be from about 50 MPa to 2 GPa, more preferably fromabout 50 MPa to 1 GPA, and most preferably from about 100 MPa to 800MPa. Such IBAD techniques may be used in conjunction with IR reflectinglayer(s), base layer(s), overcoat layer(s) or any other layer hereinwhich may be ion beam treated.

In various embodiments discussed herein, the ion beam may be a focusedion beam, a collimated ion beam, or a diffused ion beam in differentembodiments of this invention.

Coated articles according to different embodiments of this invention mayor may not be heat treated (HT) in different instances. The terms “heattreatment” and “heat treating” as used herein mean heating the articleto a temperature sufficient to achieve thermal tempering, heat bending,and/or heat strengthening of the glass inclusive article. Thisdefinition includes, for example, heating a coated article in an oven orfurnace at a temperature of least about 580 degrees C., more preferablyat least about 600 degrees C., for a sufficient period to allowtempering, bending, and/or heat strengthening. In certain instances, theHT may be for at least about 4 or 5 minutes. In certain exampleembodiments of this invention, ion beam treated silicon nitrideundercoat and/or overcoat layers are advantageous in that they changeless with regard to color and/or transmission during optional heattreatment; this can improve interlayer adhesion and thus durability ofthe final product; and ion beam treated lower silicon nitride inclusivelayers aid in reduction of sodium migration during HT.

It is noted that any of the silicon nitride layers 3 and/or 25 to be ionbeam treated herein may be initially sputter deposited in any suitablestoichiometric form including but not limited to Si₃N₄ or a Si-rich typeof silicon nitride. Example Si-rich types of silicon nitride arediscussed in U.S. 2002/0064662 (incorporated herein by reference), andany Si-rich layer discussed therein may be initially sputter-depositedherein for any suitable silicon nitride layer. Also, silicon nitridelayers herein may of course be doped with aluminum (e.g., 1-10%) or thelike in certain example embodiments of this invention. It has also beenfound that ion beam treating of a layer comprising silicon nitride (3and/or 25) increases the hardness of such a layer according to certainexample embodiments of this invention (e.g., via IBAD or peening). Alayer comprising silicon nitride when conventionally sputtered typicallyhas a hardness of from 10-14 GPa. In certain example embodiments of thisinvention however, when ion beam treated, the silicon nitride layer (3and/or 25) realizes a hardness of at least 20 GPa, more preferably of atleast 22 GPa, and most preferably of at least 24 GPa.

In certain example embodiments of this invention, one or both of NiCr orNiCrO_(x) layers 11 and/or 21 may be ion beam treated using at leastoxygen ions in order to oxidation grade as described in U.S. Ser. No.10/847,672, filed May 18, 2004, the entire disclosure of which is herebyincorporated herein by reference.

FIGS. 4-5 illustrate an exemplary linear or direct ion beam source 26which may be used to form the additional or remainder portion of an IRreflecting layer (9 and/or 19) as discussed above in connection withFIGS. 1-3, or to ion beam treat layer(s) 3 and/or 25 with at leastnitrogen ions in certain example embodiments of this invention (viapeening or IBAD). Ion beam source (or ion source) 26 includes gas/powerinlet 31, racetrack-shaped anode 27, grounded cathode magnet portion 28,magnet poles, and insulators 30. An electric gap is defined between theanode 27 and the cathode 29. A 3 kV or any other suitable DC powersupply may be used for source 26 in some embodiments. The gas(es)discussed herein for use in the ion source during the ion beam treatmentmay be introduced into the source via gas inlet 31, or via any othersuitable location. Ion beam source 26 is based upon a known gridless ionsource design. The linear source may include a linear shell (which isthe cathode and grounded) inside of which lies a concentric anode (whichis at a positive potential). This geometry of cathode-anode and magneticfield 33 may give rise to a close drift condition. Feedstock gases(e.g., nitrogen, argon, a mixture of nitrogen and argon, etc.) may befed through the cavity 41 between the anode 27 and cathode 29. Theelectrical energy between the anode and cathode cracks the gas toproduce a plasma within the source. The ions 34 (e.g., nitrogen ions)are expelled out (e.g., due to the nitrogen gas in the source) anddirected toward the layer to be ion beam treated/formed in the form ofan ion beam. The ion beam may be diffused, collimated, or focused.Example ions 34 in beam (B) are shown in FIG. 4.

A linear source as long as 0.5 to 4 meters may be made and used incertain example instances, although sources of different lengths areanticipated in different embodiments of this invention. Electron layer35 is shown in FIG. 4 and completes the circuit thereby permitting theion beam source to function properly. Example but non-limiting ion beamsources that may be used are disclosed in U.S. Pat. Nos. 6,303,226,6,359,388, and/or 2004/0067363, all of which are hereby incorporatedherein by reference.

In certain example embodiments of this invention, coated articles hereinhaving two IR reflecting layer 9, 19 may have the following optical andsolar characteristics when measured monolithically (before any optionalHT). The sheet resistances (R_(s)) herein take into account all IRreflecting layers (e.g., silver layers 9, 19).

Optical/Solar Characteristics (Monolithic Double-Ag; Pre-HT)

Characteristic General More Preferred Most Preferred R_(s) (ohms/sq.):<=5.0 <=3.5 <=2.5 E_(n): <=0.08 <=0.03 <=0.025 T_(vis) (Ill. C2°): >=70% >=75% >=75.5%

In certain example embodiments, coated articles herein may have thefollowing characteristics, measured monolithically for example, afterheat treatment (H):

Optical/Solar Characteristics (Monolithic Double-Ag; Post-HT)

Characteristic General More Preferred Most Preferred R_(s) (ohms/sq.):<=5.0 <=3.0 <=2.0 E_(n): <=0.07 <=0.03 <=0.0025 T_(vis) (Ill. C2°): >=70% >=75% >=80% Haze: <=0.40 <=0.35 <=0.30

It is noted, however, that for coatings having only one IR reflectinglayer, the sheet resistance and emissivity values will of course behigher.

Moreover, in certain example laminated embodiments of this invention,coated articles herein which have been heat treated to an extentsufficient for tempering and/or heat bending, and which have beenlaminated to another glass substrate, may have the followingoptical/solar characteristics:

Optical/Solar Characteristics (Laminated Double-Ag; Post-HT)

Characteristic General More Preferred Most Preferred R_(s) (ohms/sq.):<=5.0 <=3.0 <=2.0 E_(n): <=0.07 <=0.03 <=0.025 T_(vis) (Ill. D6510°): >=70% >=75% >=77% Haze: <=0.45 <=0.40 <=0.36

Moreover, coated articles including coatings according to certainexample embodiments of this invention have the following opticalcharacteristics (e.g., when the coating(s) is provided on a clear sodalime silica glass substrate 1 from 1 to 10 mm thick; e.g., 2.1 mm may beused for a glass substrate reference thickness in certain examplenon-limiting instances) (laminated).

Example Optical Characteristics (Laminated Double-Ag: Post-HT)

Characteristic General More Preferred T_(vis) (or TY)(Ill. D6510°): >=75% >=77% a*_(t) (Ill. D65 10°):   −6 to +1.0  −4 to 0.0 b*_(t)(Ill. D65 10°): −2.0 to +8.0 0.0 to 4.0 L* (Ill. D65 10°): 88-95 90-95R_(f)Y (Ill. C, 2 deg.):     1 to 12%     1 to 10% a*_(f) (Ill. C, 2°):−5.0 to +2.0 −3.5 to +0.5 b*_(f) (Ill. C, 2°): −14.0 to +10.0 −10.0 to0   L* (Ill. C 2°): 30-40 33-38 R_(g)Y (Ill. C, 2 deg.):     1 to 12%    1 to 10% a*_(g) (Ill. C, 2°): −5.0 to +2.0   −2 to +2.0 b*_(g) (Ill.C, 2°): −14.0 to +10.0 −11.0 to 0     L* (Ill. C 2°): 30-40 33-38

The following examples are provided for purposes of example only and arenot intended to be limiting.

EXAMPLES

In Example 1, an IR reflecting layer of Ag was formed on a 100 Å thickZnO layer. In forming the IR reflecting layer, an Ag seed layer about 60Å thick was first deposited via sputtering, and thereafter the remainderof the IR reflecting layer was formed using IBAD. The IBAD, at roomtemperature, utilized a silver sputtering target and an ion beam ofargon ions, where the average ion energy was from about 200 to 250 eVper Ar⁺ ion.

Comparative Example 1 was the same as Example 1 above, except that theentire Ag IR reflecting layer was formed using only sputtering (no IBADwas used). The results comparing Example 1 and Comparative Example areset forth below.

Ex. 1 Comparative Ex. 1 Ag Thickness (total): 120 Å 120 Å SheetResistance (R_(s), ohms/square): 3.0 3.8 IBAD: yes no Ion Energy per Ar⁺ion: 200-250 eV 0 Stress Type: compressive tensile

It can be seen from the above that the use of IBAD (see Example 1) inhelping form the IR reflecting layer resulted in a significantlyimproved (i.e., lower) sheet resistance of the IR reflecting layer.Indeed, the sheet resistance (R_(s)) was about 21% lower in Example 1where IBAD was used, than in Comparative Example 1 where only sputteringwas used to form the IR reflecting layer (3.8−3.0=0.8; and 0.8/3.8=21%).In certain example embodiments of this invention, the use of IBAD causesthe sheet resistance (R_(s)) to be at least about 5% lower than if ionbeam treatment such as IBAD had not been used, more preferably at leastabout 10% lower, sometimes at least 15% lower, and even at least 20%lower in certain instances. Moreover, the compressive stress of the IRreflecting layer of Example 1 resulted in significantly improveddurability compared to Comparative Example 1, since Comparative Example1 had tensile stress due to its deposition using only sputtering.

In Example 2, an IR reflecting layer of Ag about 139 Å thick was formedon a 600 Å thick ZnO layer. In forming the IR reflecting layer, an Agseed layer portion about 60 Å thick was first deposited via sputtering,and thereafter the remainder of the IR reflecting layer was formed usingIBAD. The IBAD, at room temperature, utilized a silver sputtering targetand an ion beam of argon ions, where the average ion energy was about250 eV per Ar⁺ ion.

Comparative Example 2 was the same as Example 2, except that the entireAg IR reflecting layer was formed using sputtering without IBAD.

Comparative Example 3 did not include a seed layer, and instead usedIBAD at the same ion energy to deposit the entire Ag IR reflectinglayer.

Ex. 2 Comp Ex. 2 Comp Ex. 3 Ag Thickness (total): 139 Å 153 Å 144 Å BulkResistivity [μΩ cm]: 4.6 4.8 4.9 Seed layer yes no no IBAD: yes no yesIon Energy per Ar⁺ ion: 250 eV 0 250 eV Stress Type: compressive tensilecompressive

It can be seen from the above that the use of IBAD (see Example 2) inhelping form the IR reflecting layer resulted in an improved (i.e.,lower) resistance of the IR reflecting layer compared to only sputteringin Comparative Example 2. It is noted that the bulk resistance (BR) inthe chart above can be converted to sheet resistance as follows:R_(s)=BR/d, where “d” is the thickness of the IR reflecting layer.Moreover, the compressive stress of the IR reflecting layer of Example 2resulted in significantly improved durability compared to ComparativeExample 2, since Comparative Example 2 had tensile stress due to itsdeposition using only sputtering.

The comparison between Example 2 and Comparative Example 3 illustratesthe benefit of the Ag seed layer. In particular, when the seed layer wasnot present and the same rather high ion energy was used to deposit theentire Ag IR reflecting layer via IBAD, the electrical resistivityactually was worse (higher) than with only sputtering (compareComparative Example 3 with Comparative Example 2). It is believed thatthis occurred since the high ion energy used at the beginning of formingthe IR reflecting layer caused significant ion mixing with theunderlying ZnO and thereby damaged the structure of the resulting IRreflecting layer. This illustrates the advantage of the FIG. 7embodiment where IBAD can be used to form the entire IR reflectinglayer, except that ion energy is increased during deposition of thelayer so that such damage to lower portions of the layer does not occuror is reduced.

The following examples relate to ion beam treatment (either via IBAD orpeening) of silicon nitride layer (e.g., layers 3 and/or 25 for exampleand without limitation).

Examples 3-5 illustrate example techniques for forming layers 3 and/or25, or any other suitable layer according to example embodiments of thisinvention. Examples 3-5 utilized MAD type of ion beam treatment, andwere made and tested as follows. A silicon nitride layer was depositedon a quartz wafer (used for ease of stress testing) using IBAD (e.g.,see FIG. 6) under the following conditions in the deposition chamber:pressure of 2.3 mTorr; anode/cathode ion beam source voltage of about800 V; Ar gas flow in the ion source of 15 sccm; N₂ gas flow in the ionsource 26 of 15 sccm; sputtering target of Si doped with about 1% boron;460 V applied to sputtering cathode; 5.4 sputtering amps used; 60 sccmAr and 40 sccm N₂ gas flow used for sputtering gas flow; linear linespeed of 50 inches/minute; where the quartz wafer substrate was circularin shape and about 0.1 to 0.15 mm thick. The ion beam treatment time fora given area was about 3 seconds.

Example 4 was the same as Example 3, except that the anode/cathodevoltage in the ion source was increased to 1,500 V.

Example 5 was the same as Example 3, except that the anode/cathodevoltage in the ion source was increased to 3,000 V.

The stress results of Examples 3-5 were as follows, and all realizedcompressive stress:

Example Compressive Stress Ion Source Anode/Cathode Volts 3 750 MPa  800 V 4 1.9 GPa 1,500 V 5 1 GPa 3,000 V

It can be seen from Examples 3-5 that the compressive stress of thesilicon nitride layer realized due to MAD deposition is a function ofion energy (i.e., which is a function of voltage applied across theanode/cathode of the ion source 26). In particular, 1,500 anode-cathodevolts caused the highest compressive stress to be realized, whereas whentoo much voltage was applied the stress value began moving back towardtensile.

Example 6

Example 6 used post-sputtering peening type of ion beam treatment, andwas made and tested as follows. A silicon nitride layer about 425 Åthick was deposited by conventional magnetron-type sputtering using a Sitarget doped with Al on a substrate. After being sputter-deposited, thesilicon nitride layer had a tensile stress of 400 MPa as tested on thequartz wafer. After being sputter-deposited and stress tested, thesilicon nitride layer was ion beam treated using an ion source 26 asshown in FIGS. 4-5 under the following conditions: ion energy of 750 eVper N ion; treatment time of about 18 seconds (3 passes at 6 seconds perpass); and N₂ gas used in the ion source. After being ion beam treated,the silicon nitride layer was again tested for stress, and had a tensilestress of only 50 MPa. Thus, the post-sputtering ion beam treatmentcaused the tensile stress of the silicon nitride layer to drop from 400MPa down to 50 MPa (a drop of 87.5%).

Example 7

The following hypothetical Example 7 is provided for purposes of exampleonly and without limitation, and uses a 2.1 mm thick clear glasssubstrates so as to have approximately the layer stack set forth belowand shown in FIG. 3. The layer thicknesses are approximations, and arein units of angstroms (Å).

Layer Stack for Example 7

Layer Glass Substrate Thickness (Å) N-doped Si₃N₄ 100 ZnAlO_(x) 109 Ag96 NiCrO_(x) 25 SnO₂ 535 Si_(x)N_(y) 126 ZnAlO_(x) 115 Ag 95 NiCrO_(x)25 SnO₂ 127 N-doped Si₃N₄ 237

The processes used in forming the coated article of Example 7 are setforth below. The sputtering gas flows (argon (Ar), oxygen (O), andnitrogen (N)) in the below table are in units of sccm (gas correctionfactor of about 1.39 may be applicable for argon gas flows herein), andinclude both tuning gas and gas introduced through the main. The linespeed was about 5 m/min. The pressures are in units of mbar×10⁻³. Thesilicon (Si) targets, and thus the silicon nitride layers, were dopedwith aluminum (Al). The Zn targets in a similar manner were doped withabout 2% Al. IBAD was used in forming each of the Ag IR reflectinglayers, and also for the upper and lower silicon nitride layers.

Sputtering Process Used in Example 7

Cathode Target Power (kW) Ar O N Volts Pressure IBAD N-doped Si₃N₄ layer3 formed using any of Examples 3-6 C14 Zn 19.5 250 350 0 276 2.24 C15 Zn27.8 250 350 0 220 1.88 C24 Process of any of Examples 1-2 C25 NiCr 16.5350 0 0 510 2.33 C28 Sn 27.3 250 454 350 258 2.30 C29 Sn 27.3 250 504350 246 1.97 C39 Sn 30 250 548 350 257 2.29 C40 Sn 28.5 250 458 350 2452.20 C41 Sn 30.8 250 518 350 267 2.45 C43 Si 59.7 350 0 376 285 2.47 C45Zn 26.9 250 345 0 209 3.78 C46 Zn 26.8 250 345 0 206 1.81 C49 Process ofany of Examples 1-2 C50 NiCr 16.6 250 75 0 575 1.81 C54 Sn 47.3 250 673350 314 1.92 IBAD N-doped Si₃N₄ layer 25 formed using any of Examples3-6

It can be seen that in the aforesaid Example 7 both of silicon nitridelayers 3 and 25 were ion beam treated in a manner so as to causeN-doping of N-doped Si₃N₄ to occur in each of the layers, and both ofthe IR reflecting layers were at least partially formed using MAD.

After being sputter deposited onto the glass substrates, thehypothetical Example 7 coated article was heat treated in a mannersufficient for tempering and heat bending, and following this heattreatment had the following characteristics as measured in monolithicform.

Characteristics of Example 7 Monolithic; post-HT

Characteristic Example 7 Visible Trans. (T_(vis) or TY) (Ill. C 2 deg.):80.0% a* −4.8 b* 10.7 Glass Side Reflectance (RY) (Ill C, 2 deg.): 8.3%a* −3.5 b* 7.8 Film Side Reflective (FY) (Ill. C, 2 deg.): 7.5% a* −5.8b* 14.2 R_(s) (ohms/square) (pre-HT): 2.74 R_(s) (ohms/square)(post-HT): 2.07 Haze: 0.28

The coated article of Example 7 was then laminated to anothercorresponding heat treated and bent glass substrate to form a laminatedvehicle windshield product. Following the lamination, the resultingcoated article laminate (or windshield) had the followingcharacteristics.

Characteristics of Example 7 Laminated; Post-HT

Characteristic Example 7 Visible Trans. (T_(vis) or TY)(Ill. D65 10°):77.8% a* −3.1 b* 3.5 Glass Side Reflectance (RY)(Ill C, 2 deg.): 9.0% a*1.5 b* −9.1 Film Side Reflective (FY)(Ill. C, 2 deg.): 8.9% a* −1.1 b*−7.8 R_(s) (ohms/square): see above Haze: 0.32

While the aforesaid Examples ion beam treat layers comprising siliconnitride and/or silver, this invention is not so limited. Other layersmay be ion beam treated in a similar manner.

In certain other embodiments of this invention, any of the aforesaidembodiments may be applied to other coatings. For example and withoutlimitation, any of the aforesaid embodiments may also be applied tocoated articles and thus solar control coatings of one of more of U.S.Patent Document Nos. 2003/0150711, 2003/0194570, U.S. Pat. Nos.6,723,211, 6,576,349, 5,514,476, 5,425,861, all of which are herebyincorporated herein by reference.

While many of the above-listed embodiments are used in the context ofcoated articles with solar control coatings, this invention is not solimited. For example, ion beam treating of layers as discussed hereinmay also be used in the context of other types of product and coatingsrelating thereto.

While the invention has been described in connection with what ispresently considered to be the most practical and preferred embodiment,it is to be understood that the invention is not to be limited to thedisclosed embodiment, but on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

1. A coated article including a glass substrate supporting a coating,wherein the coating comprises: at least one dielectric layer; an IRreflecting layer provided on the substrate over at least the dielectriclayer, wherein the IR reflecting layer is formed at least partially byion beam assisted deposition (IBAD); another dielectric layer providedon the substrate over at least the IR reflecting layer and the at leastone dielectric layer; and wherein the IBAD-deposited IR reflecting layercomprises silver and an inert element, and has compressive stress offrom about 50 MPa to 2 GPa.
 2. The coated article of claim 1, whereinthe IR reflecting layer is substantially free of oxygen in at least aportion thereof.
 3. The coated article of claim 1, wherein the IRreflecting layer is substantially metallic or metallic and comprisessilver.
 4. The coated article of claim 1, wherein the at least onedielectric layer comprises silicon nitride.
 5. The coated article ofclaim 1, wherein the coated article has a visible transmission of atleast 70% and a sheet resistance (Rs) of no greater than 5.0ohms/square.
 6. The coated article of claim 1, further comprising alayer comprising zinc oxide, wherein the IR reflecting layer is locateddirectly on and contacting the layer comprising zinc oxide.
 7. Thecoated article of claim 1, wherein the IR reflecting layer furthercomprises Ag and/or Au.
 8. The coated article of claim 1, wherein theinert element comprises krypton.